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  1 oct-21-1997 bsm 100 gb 120 dn2 igbt power module ? half-bridge ? including fast free-wheeling diodes ? package with insulated metal base plate type v ce i c package ordering code bsm 100 gb 120 dn2 1200 v 150 a half-bridge 2 c67076-a2107-a70 maximum ratings parameter symbol values unit collector-emitter voltage v ce 1200 v collector-gate voltage r ge = 20 k w v cgr 1200 gate-emitter voltage v ge 20 dc collector current t c = 25 c t c = 80 c i c 100 150 a pulsed collector current, t p = 1 ms t c = 25 c t c = 80 c i cpuls 200 300 power dissipation per igbt t c = 25 c p to t 800 w chip temperature t j + 150 c storage temperature t stg -40 ... + 125 thermal resistance, chip case r thjc 0.16 k/w diode thermal resistance, chip case r thjc d 0.3 insulation test voltage, t = 1min. v is 2500 vac creepage distance - 20 mm clearance - 11 din humidity category, din 40 040 - f sec iec climatic category, din iec 68-1 - 40 / 125 / 56
2 oct-21-1997 bsm 100 gb 120 dn2 electrical characteristics , at t j = 25 c, unless otherwise specified parameter symbol values unit min. typ. max. static characteristics gate threshold voltage v ge = v ce, i c = 4 ma v ge(th) 4.5 5.5 6.5 v collector-emitter saturation voltage v ge = 15 v, i c = 100 a, t j = 25 c v ge = 15 v, i c = 100 a, t j = 125 c v ce(sat) - - 3.1 2.5 3.7 3 zero gate voltage collector current v ce = 1200 v, v ge = 0 v, t j = 25 c v ce = 1200 v, v ge = 0 v, t j = 125 c i ces - - 6 1.5 - 2 ma gate-emitter leakage current v ge = 20 v, v ce = 0 v i ges - - 200 na ac characteristics transconductance v ce = 20 v, i c = 100 a g fs 54 - - s input capacitance v ce = 25 v, v ge = 0 v, f = 1 mhz c iss - 6.5 - nf output capacitance v ce = 25 v, v ge = 0 v, f = 1 mhz c oss - 1 - reverse transfer capacitance v ce = 25 v, v ge = 0 v, f = 1 mhz c rss - 0.5 -
3 oct-21-1997 bsm 100 gb 120 dn2 electrical characteristics , at t j = 25 c, unless otherwise specified parameter symbol values unit min. typ. max. switching characteristics, inductive load at t j = 125 c turn-on delay time v cc = 600 v, v ge = 15 v, i c = 100 a r gon = 6.8 w t d(on) - 130 260 ns rise time v cc = 600 v, v ge = 15 v, i c = 100 a r gon = 6.8 w t r - 80 160 turn-off delay time v cc = 600 v, v ge = -15 v, i c = 100 a r goff = 6.8 w t d(off) - 400 600 fall time v cc = 600 v, v ge = -15 v, i c = 100 a r goff = 6.8 w t f - 70 100 free-wheel diode diode forward voltage i f = 100 a, v ge = 0 v, t j = 25 c i f = 100 a, v ge = 0 v, t j = 125 c v f - - 1.8 2.3 - 2.8 v reverse recovery time i f = 100 a, v r = -600 v, v ge = 0 v d i f / dt = -1000 a/s, t j = 25 c t rr - 0.3 - s reverse recovery charge i f = 100 a, v r = -600 v, v ge = 0 v d i f / dt = -1000 a/s t j = 25 c t j = 125 c q rr - - 12 4 - - c
4 oct-21-1997 bsm 100 gb 120 dn2 power dissipation p tot = | ( t c ) parameter: t j 150 c 0 20 40 60 80 100 120 c 160 t c 0 100 200 300 400 500 600 700 w 900 p tot safe operating area i c = | ( v ce ) parameter: d = 0 , t c = 25 c , t j 150 c -1 10 0 10 1 10 2 10 3 10 a i c 10 0 10 1 10 2 10 3 v v ce dc 10 ms 1 ms 100 s t p = 14.0 s collector current i c = | ( t c ) parameter: v ge 3 15 v , t j 150 c 0 20 40 60 80 100 120 c 160 t c 0 20 40 60 80 100 120 a 160 i c transient thermal impedance igbt z th jc = | ( t p ) parameter: d = t p / t -4 10 -3 10 -2 10 -1 10 0 10 k/w z thjc 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 s t p single pulse 0.01 0.02 0.05 0.10 0.20 d = 0.50
5 oct-21-1997 bsm 100 gb 120 dn2 typ. output characteristics i c = f (v ce ) parameter: t p = 80 s, t j = 25 c 0 1 2 3 v 5 v ce 0 20 40 60 80 100 120 140 160 a 200 i c 17v 15v 13v 11v 9v 7v typ. output characteristics i c = f (v ce ) parameter: t p = 80 s, t j = 125 c 0 1 2 3 v 5 v ce 0 20 40 60 80 100 120 140 160 a 200 i c 17v 15v 13v 11v 9v 7v typ. transfer characteristics i c = f (v ge ) parameter: t p = 80 s, v ce = 20 v 0 2 4 6 8 10 v 14 v ge 0 20 40 60 80 100 120 140 160 a 200 i c
6 oct-21-1997 bsm 100 gb 120 dn2 typ. gate charge v ge = | ( q gate ) parameter: i c puls = 100 a 0 100 200 300 400 500 nc 650 q gate 0 2 4 6 8 10 12 14 16 v 20 v ge 800 v 600 v typ. capacitances c = f ( v ce ) parameter: v ge = 0 v, f = 1 mhz 0 5 10 15 20 25 30 v 40 v ce -1 10 0 10 1 10 2 10 nf c ciss coss crss reverse biased safe operating area i cpuls = f(v ce ) , t j = 150c parameter: v ge = 15 v 0 200 400 600 800 1000 1200 v 1600 v ce 0.0 0.5 1.0 1.5 2.5 i cpuls / i c short circuit safe operating area i csc = f(v ce ) , t j = 150c parameter: v ge = 15 v, t sc 10 s, l < 25 nh 0 200 400 600 800 1000 1200 v 1600 v ce 0 2 4 6 8 12 i csc / i c
7 oct-21-1997 bsm 100 gb 120 dn2 typ. switching time i = f (i c ) , inductive load , t j = 125c par.: v ce = 600 v, v ge = 15 v, r g = 6.8 w 0 50 100 150 a 250 i c 1 10 2 10 3 10 ns t tdon tr tdoff tf typ. switching time t = f (r g ) , inductive load , t j = 125c par.: v ce = 600 v, v ge = 15 v, i c = 100 a 0 10 20 30 40 w 60 r g 1 10 2 10 3 10 4 10 ns t tdon tr tdoff tf typ. switching losses e = f (i c ) , inductive load , t j = 125c par.: v ce = 600 v, v ge = 15 v, r g = 6.8 w 0 50 100 150 a 250 i c 0 5 10 15 20 25 30 35 40 45 50 mws 60 e eon eoff typ. switching losses e = f (r g ) , inductive load , t j = 125c par.: v ce = 600v, v ge = 15 v, i c = 100 a 0 10 20 30 40 w 60 r g 0 5 10 15 20 25 30 mws 40 e eon eoff
8 oct-21-1997 bsm 100 gb 120 dn2 forward characteristics of fast recovery reverse diode i f = f(v f ) parameter: t j 0.0 0.5 1.0 1.5 2.0 v 3.0 v f 0 20 40 60 80 100 120 140 160 a 200 i f t j =25c =125c j t transient thermal impedance diode z th jc = | ( t p ) parameter: d = t p / t -4 10 -3 10 -2 10 -1 10 0 10 k/w z thjc 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 s t p single pulse 0.01 0.02 0.05 0.10 0.20 d = 0.50
9 oct-21-1997 bsm 100 gb 120 dn2 circuit diagram package outlines dimensions in mm weight: 420 g
technische information / technical information igbt-module igbt-modules BSM100GB120DN2 typ. l sce 20 nh modulinduktivit?t stray inductance module anhang c-serie appendix c-series geh?use spezifische werte housing specific values geh?usema?e c-serie package outline c-series appendix c-series appendix_c-serie_BSM100GB120DN2.xls 2001-09-20
nutzungsbedingungen die in diesem produktdatenblatt enthaltenen daten sind ausschlie?lich fr technisch geschultes fachpersonal bestimmt. die beurteilung der geeignetheit dieses produkte s fr die von ihnen anvisierte anwendung sowie die beurteilung der vollst?ndigkeit der bereitgestellten produktdaten fr diese anwendung obliegt ihnen bzw. ihren technischen abteilungen. in diesem produktdatenblatt werden diejenigen merkmale besch rieben, fr die wir eine liefervertragliche gew?hrleistung bernehmen. eine solche gew?hrleistung richtet sich ausschlie?l ich nach ma?gabe der im jeweiligen liefervertrag enthaltenen bestimmungen. garantien jeglicher art werden fr das produkt und dessen eigenschaft en keinesfalls bernommen. sollten sie von uns produktinformationen ben?tigen, die ber den inhalt dieses produktdatenbl atts hinausgehen und insbesondere eine spezifische verwendung und den einsatz dieses produktes betreffen, setzen sie sich bitte mit dem fr sie zust?ndigen vertriebsbro in verbindung (siehe www.eupec.com, vertrieb&kontakt). fr interessent en halten wir application notes bereit. aufgrund der technischen anforderungen k?nnte unser produkt ge sundheitsgef?hrdende substanzen enthalten. bei rckfragen zu den in diesem produkt jeweils enthaltenen s ubstanzen setzen sie sich bitte ebenfalls mit dem fr sie zust?ndigen vertriebsbro in verbindung. sollten sie beabsichtigen, das produkt in anwendungen der luftfahrt, in gesundheits- oder lebensgef?hrdenden oder lebenserhaltenden anwendungsbereichen ei nzusetzen, bitten wir um mitteilung. wir we isen darauf hin, dass wir fr diese f?lle - die gemeinsame durchfhrung eines risiko- und qualit?tsassessments; - den abschluss von speziellen q ualit?tssicherungsvereinbarungen; - die gemeinsame einfhrung von ma?nahmen zu einer laufenden produktbeobachtung dringend empfehlen und gegebenenfalls die belieferung v on der umsetzung solcher ma?nahmen abh?ngig machen. soweit erforderlich, bitten wir sie, entsprechende hinweise an ihre kunden zu geben. inhaltliche ?nderungen dieses produkt datenblatts bleiben vorbehalten. terms & conditions of usage the data contained in this product data s heet is exclusively intended for technically trained staff. you and your technical dep artments will have to evaluate the suitability of the product for the intended application and the completeness of the product data with respect to such application. this product data sheet is describing the characteristics of this product for which a warranty is granted. any such warranty is granted exclusively pursuant the terms and conditi ons of the supply agreement. there will be no guarantee of any kind for the product a nd its characteristics. should you require product information in excess of the data given in this product data sheet or which concerns the specific application of our product, please c ontact the sales office, which is responsible for you (see www.eupec.com, sales&contact). f or those that are specifically interested we may provide application notes. due to technical requirements our product may contain dangerous substances. for information on the types in question please contact the sales office, which is responsible for you. should you intend to use the product in aviation applications , in health or live endangering or life support applications, plea se notify. please note, that for any such applications we urgently recommend - to perform joint risk and quality assessments; - the conclusion of quality agreements; - to establish joint measures of an ongoing product survey, and that we may make delivery depended on the realization of any such measures. if and to the extent necessary, please forward equivalent notices to your customers. changes of this product data sheet are reserved.


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